Integrated circuit memory devices having reduced power consumpti

Static information storage and retrieval – Powering – Conservation of power

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365233, G11C 700

Patent

active

060580631

ABSTRACT:
Integrated circuit memory devices (e.g., SDRAM) include an input buffer and a power reduction control circuit which disables the input buffer in response to an inactive chip select signal (CSB). The input buffer comprises a first differential amplifier having a first input electrically coupled to an input signal line (PX) and a first pull-up transistor electrically connected in series between a pull-up reference node of the first differential amplifier and a power supply signal line (e.g., Vcc). The output of the power reduction control circuit is electrically connected to a gate electrode of the first pull-up transistor. The first pull-up transistor can be turned off in response to an inactive chip select signal (CSB=1), to thereby electrically disconnect the first differential amplifier from its power supply. The input buffer may also comprise a first pull-down transistor electrically connected in series between an output of the first differential amplifier and a reference potential signal line (e.g., GND) and the output of the power reduction control circuit is electrically connected to a gate electrode of the first pull-down transistor.

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