Integrated circuit memory devices having direct read capability

Details Integrated circuit memory devices having direct read capability Integrated circuit memory devices having direct read capability

1996-11-14

1998-05-05

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

36518525, G11G 1606

Patent

active

057485291

ABSTRACT:
Integrated circuit memory devices having direct read capability eliminate the use of page buffers to retain bit line data during reading operations. The page buffer is replaced by a plurality of PMOS pull-up transistors which are coupled through NMOS pass transistors to respective bit lines and also directly to inputs of a column selection circuit. A PMOS pull-up transistor and sense amplifier are also preferably provided at an output of the column selection circuit so that respective bit lines can be read one-at-a-time upon sequential application of a plurality of column address signals to the column selection circuit. The output of the sense amplifier is then provided to an output buffer which is typically electrically connected to an I/O pad.

REFERENCES:
patent: 4905197 (1990-02-01), Urai
patent: 4999812 (1991-03-01), Amin
patent: 5237534 (1993-08-01), Tanaka et al.
patent: 5268867 (1993-12-01), Momodomi et al.
patent: 5440506 (1995-08-01), Longway et al.

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