Electrical computers and digital processing systems: memory – Storage accessing and control – Shared memory area
Reexamination Certificate
2005-08-23
2005-08-23
Sparks, Donald (Department: 2187)
Electrical computers and digital processing systems: memory
Storage accessing and control
Shared memory area
C711S150000, C365S189050, C365S189040, C365S230050, C365S230080
Reexamination Certificate
active
06934816
ABSTRACT:
Asynchronous memory devices utilize loopback circuitry to provide efficient and high speed “flow-through” of write data when conventional flow-through operations are not available. An exemplary memory device includes a memory array having first and second ports that can each support asynchronous read and write access and a first input/output control circuit. The first input/output control circuit is electrically coupled to the first port and includes a first sense amplifier, which is configured to receive read data from the first port, and a first bypass latch having an output coupled to the first sense amplifier. A second input/output control circuit is also provided. The second input/output control circuit is electrically coupled to the second port and includes a second sense amplifier, which is configured to receive read data from the second port, and a second bypass latch.
REFERENCES:
patent: 4998221 (1991-03-01), Correale, Jr.
patent: 5197035 (1993-03-01), Ito
patent: 5321652 (1994-06-01), Ito
patent: 5612916 (1997-03-01), Neduva
patent: 5642324 (1997-06-01), Chosh et al.
patent: 5699530 (1997-12-01), Rust et al.
patent: 5761147 (1998-06-01), Lindner et al.
patent: 5940334 (1999-08-01), Holst
patent: 5991209 (1999-11-01), Chow
patent: 5999478 (1999-12-01), Proebsting
patent: 6000016 (1999-12-01), Curtis et al.
patent: 6067598 (2000-05-01), Roohparvar et al.
patent: 6104653 (2000-08-01), Proebsting
patent: 6163475 (2000-12-01), Proebsting
patent: 6181634 (2001-01-01), Okita
patent: 6198682 (2001-03-01), Proebsting
patent: 6208575 (2001-03-01), Proebsting
patent: 6212109 (2001-04-01), Proebsting
patent: 6240046 (2001-05-01), Proebsting
patent: 6445638 (2002-09-01), Hsu et al.
High-Speed 4K×18 Dual-Port Static Ram, IDT7034S/L, IDT, Sep. 1999, 19 pages.
Geng Chenhao
Matthews Frank
Ye Jessica
Diller Jesse
Integrated Device Technology Inc.
Myers Bigel & Sibley & Sajovec
Sparks Donald
LandOfFree
Integrated circuit memory devices having asynchronous... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit memory devices having asynchronous..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit memory devices having asynchronous... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3509959