Integrated circuit memory devices and operating methods includin

Details Integrated circuit memory devices and operating methods includin Integrated circuit memory devices and operating methods includin

1996-12-24

1999-04-20

Chung, Phung M.

Excavating

G11C 2900

Patent

active

058963952

ABSTRACT:
An integrated circuit memory device includes an array of memory cells having a selectable first or second data path width. The integrated circuit memory device also includes a circuit which permanently selects one of the first and second data path widths for permanent operation of the integrated circuit memory device, and which temporarily overrides the permanent selection, to thereby temporarily operate the integrated circuit memory device using the other data path width. Accordingly, for example, when the first path width is a 16 bit path width and the second path width is a 4 bit path width, the path width is permanently selected during manufacturing of the integrated circuit memory device, to thereby manufacture 16 bit path width or 4 bit path width devices. However, during testing, the 16 bit path width devices may be temporarily overridden and tested as 4 bit path width devices. The number of test pins which are required can therefore be reduced and testing efficiency can be improved.

REFERENCES:
patent: 5070445 (1991-12-01), Woodward
A book on "CMOS DRAMS with Model Nos. KM44C4004A, KM44C04104A, KM44V004A and KM44V4104A", Samsung Electronics Co., Ltd. pp. 46-47, 1995.
A book on "CMOS DRAM with Model Nos. KM416C1004A, KM416C1204A, KM416V1004A, KM416V1024A" Samsung Electronics Co., Ltd., 1995, pp. 62-63.

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