Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-08-09
2005-08-09
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185330
Reexamination Certificate
active
06927999
ABSTRACT:
An integrated circuit memory device includes a source line and a memory cell array that includes n memory cells that are connected to the source line. The n memory cells are operative to draw current from the source line in response to an n bit data word. A dummy memory cell circuit is operative to draw current from the source line responsive to the n bit data word such that a total current drawn by the memory cell array and the dummy memory cell circuit during a program operation is given by n*a current drawn by one of the n memory cells.
REFERENCES:
patent: 6785163 (2004-08-01), Yeh et al.
Kim Gyu-Hong
Lee Hyo-Sang
Sim Soung-Hoon
Lam David
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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