Static information storage and retrieval – Floating gate
Reexamination Certificate
2006-04-11
2006-04-11
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
C365S185280, C365S185290, C257S135000, C257S316000, C257S328000, C438S201000, C438S206000, C438S211000, C438S212000, C438S257000
Reexamination Certificate
active
07027328
ABSTRACT:
Structures and methods for DEAPROM memory with low tunnel barrier intergate insulators are provided. The DEAPROM memory includes a first source/drain region and a second source/drain region separated by a channel region in a substrate. A floating gate opposes the channel region and is separated therefrom by a gate oxide. A control gate opposes the floating gate. The control gate is separated from the floating gate by a low tunnel barrier intergate insulator having a tunnel barrier of less than 1.5 eV. The low tunnel barrier intergate insulator includes a metal oxide insulator selected from the group consisting of NiO, Al2O3, Ta2O5, TiO2, ZrO2, Nb2O5, Y2O3, Gd2O3, SrBi2Ta2O3, SrTiO3, PbTiO3, and PbZrO3. The floating gate includes a polysilicon floating gate having a metal layer formed thereon in contact with the low tunnel barrier intergate insulator. And, the control gate includes a polysilicon control gate having a metal layer formed thereon in contact with the low tunnel barrier intergate insulator.
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Kim, Yeong K.,
Ahn Kie Y.
Eldridge Jerome M.
Forbes Leonard
Hoang Huan
Micro)n Technology, Inc.
Pham Ly Duy
Schwegman Lundberg Woessner & Kluth P.A.
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