Integrated circuit memory device

Details Integrated circuit memory device Integrated circuit memory device

1997-06-03

1998-06-09

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

36518533, 365218, 365233, G11C 1300

Patent

active

057645728

ABSTRACT:
An improved sensing device for an integrated circuit memory device is provided. In particular, the memories can be those in which memory cells are formed by insulated gate transistors, such as EPROMs and flash EPROMs. Conventionally, such memories use static sence amplifiers. The present invention provides a dynamic sence amplifier suitable for use in these memories.

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patent: 4980863 (1990-12-01), Ogihara
patent: 5088065 (1992-02-01), Hanamura et al.
patent: 5311469 (1994-05-01), Hoshi et al.
Japanese Office Action, Appln. No. 296526/1995, mailed Mar. 25, 1997, with English translation.
English translation of portion of JP 6-282993, Oct. 7, 1994.
English translation of portion of JP 4-119597, Apr. 21, 1992.
JP 02078099 A (English language abstract of JP 2-78099).
JP 04119597 A (English language abstract of JP 4-119597).
Standard Search Report issued by the European Patent Office on Feb. 1, 1995.
1990 IEEE International Solid State Circuits Conference; Digest of Technical Papers, Feb. 14, 1990 San Francisco, pp. 58-50; Atsumi, et al., "Non-Volatile and Fast Static Memories".

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