Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-01-12
2008-07-15
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S210130
Reexamination Certificate
active
07400521
ABSTRACT:
An integrated circuit comprises a resistive memory cell, at least one reference cell, a first device configured to apply a predetermined read voltage to the resistive memory cell and a second device configured to apply the predetermined read voltage to the reference cell. The resistive memory cell can be switched between a highly resistive memory state and at least one lowly resistive memory state. The reference cell comprises a resistance value representing a reference state. The first device generates the read voltage for a first resistance range, the first resistance range comprising the memory states of the resistive memory cell. The second device generates the read voltage for a second resistance range, the second resistance range being smaller in comparison to the first resistance range and comprising the reference state of the reference cell.
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Patterson & Sheridan L.L.P.
Qimoda AG
Tran Michael T
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