Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-09-01
2008-11-18
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S302000, C257S306000, C257S334000, C257S401000, C257S773000
Reexamination Certificate
active
07453112
ABSTRACT:
An integrated circuit memory cell includes a combined first capacitor electrode and first transistor source/drain, a second capacitor electrode, a capacitor dielectric between the first and second electrodes, and a vertical transistor above and including the first source/drain. The second source/drain may be included in a digit line inner conductor connecting a digit line to a transistor channel of the vertical transistor. The channel may include a semiconductive upward extension of the combined first electrode and first source/drain. The memory cell may be included in an array of a plurality of such memory cells wherein the second electrode is a common electrode among the plurality. The memory cell may provide a straight-line conductive path between the first electrode and a digit line, the path extending through the vertical transistor.
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Micro)n Technology, Inc.
Well St. John P.S.
Wojciechowicz Edward
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