Integrated circuit memory access mechanisms

Details Integrated circuit memory access mechanisms Integrated circuit memory access mechanisms

2011-01-04

2011-01-04

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S190000

Reexamination Certificate

active

07864562

ABSTRACT:
A memory cell36within an integrated circuit memory is provided with an access controller32coupled to a first pass gate38and a second pass gate40. During a write access to the memory cell38both the first pass gate38and the second pass gate40are opened. During a read access, the first pass gate38is opened and the second pass gate40is closed. This asymmetry in the read and write operations permits an asymmetry in the gates forming the memory cell36thereby permitting changes to increase both read robustness and write robustness. The asymmetry in the design parameters of different gates can take the form of varying the gate length, the gate width and the threshold voltage so as to vary the conductance of different gates to suit their individual role within the memory cell36which is operating in the asymmetric manner provided by the separate word line signals driving read operations and write operations.

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