Static information storage and retrieval – Systems using particular element – Magnetic thin film
Patent
1997-01-22
1998-05-05
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Magnetic thin film
3652255, 3652435, G11C 11155
Patent
active
057485232
ABSTRACT:
Integrated circuit memory elements are fabricated by disposing a first layer of electrically conductive material on the surface of an electrically insulating substrate. The first layer of electrically conductive material is formed into a first predetermined pattern. A second layer of electrically insulating material is disposed on the surface of the electrically insulating substrate and the patterned first layer of electrically conductive material. A first layer of magnetizable material is disposed on the second insulating layer and is formed into a predetermined pattern having a predetermined positional relationship with respect to the underlying patterned first layer of electrically conductive material. A third layer of electrically insulating material is disposed over the second layer of insulating material and the patterned first layer of magnetizable material. Openings are formed in the underlying layers of insulating material to expose predetermined electrical contact areas on the underlying patterned first electrically conductive layer. A second electrically conductive layer is disposed over the third layer of electrically insulating material into the openings and into electrical contact with the exposed electrical contact areas of the underlying patterned first electrically conductive layer. The second electrically conductive layer is formed into a second predetermined pattern having a predetermined positional relationship with respect to the underlying patterned layer of magnetizable material and the patterned first electrically conductive layer. The patterned first electrically conductive layer and the patterned second electrically conductive layer define at least two conductive windings disposed about the patterned magnetizable material.
REFERENCES:
patent: 3154768 (1964-10-01), Hardwick
patent: 3305814 (1967-02-01), Moyer
patent: 3418644 (1968-12-01), Higashi et al.
patent: 3596260 (1971-07-01), Olson et al.
patent: 5095357 (1992-03-01), Andoh et al.
patent: 5126971 (1992-06-01), Lin et al.
patent: 5157576 (1992-10-01), Takaya et al.
L. Foldy, "Faraday 's Law Of Electromagnetic Induction", Encyclopedia Of Physics, Addison-Wesley Publishing Co., 1981, pp. 297-298.
A. Arrott, "Ferromagnetism", Encyclopedia Of Physics, Addison-Wesley Publishing Co., 1981, pp. 308-312.
Katz, ed., Solid State Magnetic and Dielectric Devices (1959) pp. 370-377.
Saadat Irfan
Thomas Michael E.
National Semiconductor Corporation
Nelms David C.
Tran Andrew Q.
LandOfFree
Integrated circuit magnetic memory element having a magnetizable does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit magnetic memory element having a magnetizable, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit magnetic memory element having a magnetizable will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-62456