Integrated circuit, its fabrication process and memory cell...

Details Integrated circuit, its fabrication process and memory cell... Integrated circuit, its fabrication process and memory cell...

2007-08-21

2007-08-21

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S309000, C257SE27089, C257S296000

Reexamination Certificate

active

10486950

ABSTRACT:
This integrated circuit comprises a capacitor (23) formed above a substrate (1) inside a first cavity in a dielectric and comprising a first electrode, a second electrode, a thin dielectric layer placed between the two electrodes, and a structure (7) for connection to the capacitor.The connection structure is formed at the same level as the capacitor in a second cavity narrower than the first cavity, the said second cavity being completely filled by an extension of at least one of the electrodes of the capacitor.

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patent: 6710389 (2004-03-01), Shibata

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