Electrical computers and digital processing systems: memory – Address formation – Address mapping
Reexamination Certificate
2005-05-03
2005-05-03
Nguyen, Hiep T. (Department: 2187)
Electrical computers and digital processing systems: memory
Address formation
Address mapping
C711S212000, C711S220000
Reexamination Certificate
active
06889307
ABSTRACT:
A memory organization supports a basic page size and an extended page size. A certain portion of its memory cells are dual-addressable memory cells which may be used to provide the additional memory required for the extended pages or alternatively may be used to provide additional memory within a basic page. A memory array is preferably implemented as basic pages and directly addressed to support the basic page size. The received addresses are translated to map each extended page into a portion of a basic page to support the extended pages. In one embodiment, high order row addresses are conveyed for use as high-order column addresses, and the high-order row addresses overridden, to map each extended page into a contiguous block of basic pages.
REFERENCES:
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 5109360 (1992-04-01), Inazumi et al.
patent: 5138705 (1992-08-01), Lo et al.
patent: 5172341 (1992-12-01), Amin
patent: 5297148 (1994-03-01), Harari et al.
patent: 5315558 (1994-05-01), Hag
patent: 5367653 (1994-11-01), Coyle et al.
patent: 5671229 (1997-09-01), Harari et al.
patent: 5691945 (1997-11-01), Liou et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5764576 (1998-06-01), Hidaka et al.
patent: 5805520 (1998-09-01), Anglada et al.
patent: 5835396 (1998-11-01), Zhang
patent: 5860076 (1999-01-01), Greene et al.
patent: 5896404 (1999-04-01), Kellogg et al.
patent: 5999446 (1999-12-01), Harari et al.
patent: 6020758 (2000-02-01), Patel et al.
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6041016 (2000-03-01), Freker
patent: 6052798 (2000-04-01), Jeddeloh
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6069638 (2000-05-01), Porterfield
patent: 6070262 (2000-05-01), Kellogg et al.
patent: 6081463 (2000-06-01), Shaffer et al.
patent: 6112285 (2000-08-01), Ganapathy et al.
patent: 6149316 (2000-11-01), Harari et al.
patent: 6163490 (2000-12-01), Shaffer et al.
patent: 6166559 (2000-12-01), McClintock et al.
patent: 6192487 (2001-02-01), Douceur
patent: 6236602 (2001-05-01), Patti
patent: 6567289 (2003-05-01), Cleveland et al.
patent: 6694422 (2004-02-01), Kim
U.S. Appl. No. 09/748,649, filed Dec. 22, 2000, “Partial Selection of Passive Element Memory Cell Sub-Arrays for Write Operations,” inventors Roy E. Scheuerlein and Matthew P. Crawley, 38 pp.
U.S. Appl. No. 09/897,705, filed Jun. 29, 2001, “Three-Dimensional Memory Array Incorporating Serial Chain Diode Stack,” inventors Bendik Kleveland et al., 72 pp.
U.S. Appl. No. 09/747,574, filed Dec. 22, 2000, entitled “Three-Dimensional Memory Array and Method for Storing Data Bits and ECC Bits Therein,” and naming inventors Thomas H. Lee, James M. Cleeves and Mark G. Johnson, 18 pages.
U.S. Appl. No. 09/560,626, filed Apr. 28, 2000, entitled “Three-Dimensional Memory Array and Method of Fabrication,” naming inventor N. Johan Knall, 48 pp.
U.S. Appl. No. 09/638,428, filed Aug. 14, 2000, “Low Cost Three-Dimensional Memory Array,” inventors Mark G. Johnson et al., 25 pp.
U.S. Appl. No. 09/814,727, filed Mar. 21, 2001, “Three Dimensional Memory Array and Method of Fabrication,” inventors Johan Knall and Mark G. Johnson, 49 pp.
Toshio Wada et al, “A 15-ns 1024-Bit Fully Static MOS RAM,” IEEE Journal of Solid-State Circuits, vol. SC-13, No. 5, Oct. 1978, pp. 635-639.
Kim C. Hardee and Rahul Sud, “A Fault-Tolerant 30 ns/375 mW 16K x 1 NMOS Static RAM,”IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, Oct. 1981, pp. 435-443.
Misao Higuchi et al., “An 85ns 16mB MOS EPROM with Alterable Word Organization,” ISSCC 90, 1990 IEEE International Solid-State Circuits Conference, Feb. 1990, pp. 56-57.
“TH58512FT Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS” datasheet, 1999, 34 pp.
Matrix Semiconductor Inc.
Nguyen Hiep T.
Zagorin O'Brien Graham LLP
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