Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-05-10
2011-05-10
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S330000, C257SE45002, C257SE21001
Reexamination Certificate
active
07939817
ABSTRACT:
An integrated circuit includes a heater element serving as a first electrode, a second electrode, a memory element comprising resistance changing material coupled to the heater element and to the second electrode, and a diffusion compensation region coupled to the heater element and to the resistance changing material. The diffusion compensation region includes a surplus of at least one diffusible species present in the memory element and provides at least one diffusible species to the memory element.
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Andres Dieter
Happ Thomas
Majewski Petra
Ruf Bernhard
Edell Shapiro & Finnan LLC
Le Dung A.
Qimonda AG
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