Integrated circuit including memory element with spatially...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257S002000, C257S330000, C257SE45002, C257SE21001

Reexamination Certificate

active

07939817

ABSTRACT:
An integrated circuit includes a heater element serving as a first electrode, a second electrode, a memory element comprising resistance changing material coupled to the heater element and to the second electrode, and a diffusion compensation region coupled to the heater element and to the resistance changing material. The diffusion compensation region includes a surplus of at least one diffusible species present in the memory element and provides at least one diffusible species to the memory element.

REFERENCES:
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patent: 2008/0210923 (2008-09-01), Sato
patent: 2009/0303780 (2009-12-01), Kasko et al.
J.H. Oh et al., “Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology”, IEEE, 1-4244-0439, Aug. 2006.
Kinan Kim et al., “Reliability Investigations for Manufacturable High Density PRAM”, IEEE 05CH37616 43rd Annual International Reliability Physics Symposium, San Jose, 2005, pp. 157-162.
S.J. Ahn et al., “Highly Reliable 50nm Contact Cell Technology for 256Mb PRAM”, 2005 Symposium on VLSI Technology Digest of Technical Papers.
Manzur Gill et al., “Ovonic Unified Memory—A High-performance Nonvolatile Memory Technology for Stand Alone Memory and Embedded Applications”.
Stefan Lai et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”.

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