Integrated circuit including memory cell for storing an...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S189011

Reexamination Certificate

active

11107182

ABSTRACT:
The invention relates to a memory cell for providing an information item, having a memory element, which has a PMC resistance component with a solid electrolyte material. The solid electrolyte material may be put into a first state with a high electrical resistance and into a second state with a low electrical resistance. The memory element has a resistance element which is connected up to the PMC resistance component in such a way as to reduce the total resistance of the memory element in the first state.

REFERENCES:
patent: 2003/0168651 (2003-09-01), Kozicki
patent: 2004/0124407 (2004-07-01), Kozicki et al.
patent: 2005/0127524 (2005-06-01), Sakamoto et al.
patent: 2006/0126413 (2006-06-01), Liaw
German Patent Office Examination Report dated Feb. 22, 2005.
M. N. Kozicki, M. Yun, L. Hilt, ,A.Singh,Applications Of Programmable Resistance Changes in Metal-Doped Chalconides, Electrochemical Society Proc., vol. 99-13 (1999), pp. 298-309.
R. Neale,Micron To Look Again At Non-Volatile Amorphous Memory, Electronic Engineering Design (2002).
B. Price,Chalcogenic Memories, Emerging Memories—Technologies and Trends, Kluwer Academic Publishers (2002), pp. 254-257.
R. Symanczyk et al.,Electrical Characterization of Solid State Ionic Memory Elements, Proceedings of the Non-Volatile Memory Technology Symposium, 17-1, San Diego, CA (2003).

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