Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-25
2005-10-25
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C257S303000, C257S306000, C257S265000, C257S754000
Reexamination Certificate
active
06958505
ABSTRACT:
There is provided an integrated circuit having active components including junctions formed in a monocrystalline substrate doped locally, and at least one passive component situated above the active components. The integrated circuit includes a first insulating layer separating the active components and abase of the passive component, and a metal terminal for electrically connecting the passive component with at least one of the active components. The metal terminal is formed in the thickness of the first insulating layer and has a contact surface that projects from the limits of a junction of the one active component. In a preferred embodiment, the passive component is a capacitor. Also provided is a method of fabricating an integrated circuit that includes MOS transistors and an onboard memory plane of DRAM cells in a matrix.
REFERENCES:
patent: 5453400 (1995-09-01), Abernathey et al.
patent: 5874756 (1999-02-01), Ema et al.
patent: 5959327 (1999-09-01), Sandhu et al.
patent: 5977583 (1999-11-01), Hosotani et al.
patent: 6037216 (2000-03-01), Liu et al.
patent: 6133599 (2000-10-01), Sung et al.
patent: 6262446 (2001-07-01), Koo et al.
patent: 6274424 (2001-08-01), White, Jr. et al.
patent: 6294464 (2001-09-01), Trivedi
patent: 6333535 (2001-12-01), Okumura
patent: 6358820 (2002-03-01), Maeda
patent: 6492241 (2002-12-01), Rhodes et al.
patent: 6677636 (2004-01-01), Deboer et al.
patent: 2 800 199 (2001-04-01), None
Syd. R. Wilson, Clarence J. Tracy, and John L. Freeman, Jr., “Handbook of Multilevel Metallization for Integrated Circuits,” Noyes Publ., Westwood, New Jersey (1993), pp. 82-84,157,868.
S. Wolf, “Silicon Processing for the VLSI Era: vol. 2—Process Integration,” Lattice Press, Sunset Beach, CA (1990), pp. 12-13.
Syd R. Wilson, Clarence J. Tracy, and John L. Freeman, Jr., “Handbook of Multilevel Metallization for Integrated Circuits,” Noyes Publ., Westwood, New Jersey (1993), pp. 157,868.
French Preliminary Search Report dated Jul. 3, 2002 for French Application No. 0110866.
Mallardeau Catherine
Mazoyer Pascale
Piazza Marc
Bongini Stephen
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Lee Eddie
Magee Thomas
STMicroelectronics S.A.
LandOfFree
Integrated circuit including active components and at least... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit including active components and at least..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit including active components and at least... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3444199