Integrated circuit including a non-volatile memory device and a

Details Integrated circuit including a non-volatile memory device and a Integrated circuit including a non-volatile memory device and a

1997-07-30

1999-07-20

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257324, 257637, 438257, H01L 29788

Patent

active

059259086

ABSTRACT:
An integrated circuit (10) is formed on a semiconductor substrate (20) and includes a non-volatile memory device (12) and a semiconductor device (11). The non-volatile memory device (12) includes a dielectric layer (15) than has a nitrogen composition. The non-volatile memory device (12) also includes a silicon dioxide layer (33) that is also used to form part of the semiconductor device (11).

REFERENCES:
patent: 5408115 (1995-04-01), Chang
patent: 5422504 (1995-06-01), Chang et al.
patent: 5470772 (1995-11-01), Woo
patent: 5474947 (1995-12-01), Chang et al.
patent: 5494838 (1996-02-01), Chang et al.
patent: 5585293 (1996-12-01), Sharma et al.
patent: 5589413 (1996-12-01), Sung et al.
patent: 5729035 (1998-03-01), Anma
patent: 5780891 (1998-07-01), Kauffman et al.
patent: 5783471 (1998-07-01), Chu
patent: 5783849 (1998-07-01), Kishi et al.
patent: 5793081 (1998-08-01), Tomioka et al.

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