Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-10-29
2010-11-09
Stark, Jarrett J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S343000, C257SE27084, C257SE21646
Reexamination Certificate
active
07829892
ABSTRACT:
An integrated circuit including a gate electrode is disclosed. One embodiment provides a transistor including a first source/drain electrode and a second source/drain electrode. A channel is arranged between the first and the second source/drain electrode in a semiconductor substrate. A gate electrode is arranged adjacent the channel layer and is electrically insulated from the channel layer. A semiconductor substrate electrode is provided on a rear side. The gate electrode encloses the channel layer at least two opposite sides.
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Hofmann Franz
Luyken Richard Johannes
Manger Dirk
Risch Lothar
Roesner Wolfgang
Dicke Billig & Czaja, PLLC
Qimonda AG
Stark Jarrett J
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