Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2007-05-22
2007-05-22
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C355S067000, C257SE21521, C257SE21522
Reexamination Certificate
active
10942608
ABSTRACT:
A method for marking a semiconductor wafer302includes the steps of: providing a reticle300including liquid crystal pixels; positioning the semiconductor wafer in proximity to the reticle; directing radiation through a first plurality of the pixels onto a first location on the wafer; changing the relative positions of the semiconductor wafer and the reticle; and directing radiation through a second plurality of the pixels onto a second location on the wafer. The first plurality of pixels can be used to form a first mark and the second plurality of pixels can be used to form a second mark, wherein the second mark is different from the first mark. The marks can be made of a pattern of dots in order to save space. The pixels can be selected to form certain marks by using a computer304to turn on or off a transistor that may be associated with each pixel. Also described is a system for marking a semiconductor wafer. The system includes a wafer mount301; a radiation source306in proximity to the wafer mount; a reticle300which includes liquid crystal pixels and that is positionable between the radiation source and the wafer mount; and a mechanism303for changing the relative positions of the reticle and the wafer mount. The radiation source can be non-coherent far-ultraviolet, near-ultraviolet, or visible sources, or a laser.
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Brady III Wade James
Lee Kyoung
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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