Integrated circuit (IC) with a two-terminal diode device to prot

Details Integrated circuit (IC) with a two-terminal diode device to prot Integrated circuit (IC) with a two-terminal diode device to prot

1995-10-20

1997-01-14

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257481, 257551, 257603, 257606, H01L 2362

Patent

active

055942660

ABSTRACT:
An ESD protective clamp device comprised of a two-terminal diode formed in an isolated chip cell. The lower part of this chip cell region contains a buried layer of silicon with P-type dopant, and the upper part is an epitaxial layer also with P-type dopant. An annular (ring-shaped) anode plug segment is formed at the outer reaches of the epitaxial layer with P+ doping. At the interior central region is an N-type plug circular in horizontal cross-section and concentric with the annular plug. This central plug serves as the cathode. Electrical connections are made to anode and cathode to provide interconnection with an IC circuit with a MOM capacitor to be protected.

REFERENCES:
patent: 5446302 (1995-08-01), Beigel et al.
patent: 5477078 (1995-12-01), Beigel et al.

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