Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2008-05-27
2011-11-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189110, C365S206000
Reexamination Certificate
active
08064274
ABSTRACT:
A method of generating a voltage as well as an integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell array including (i) a plurality of memory cells, arranged in a matrix of rows and columns, and (ii) a plurality of bit lines, wherein each bit line includes a plurality of memory cells. The integrated circuit further includes voltage generation circuitry, coupled to a plurality of the bit lines, to (i) apply a first voltage to a first group of associated bit lines, and (ii) apply a second voltage to a second group of associated bit lines, and (iii) generate a third voltage by connecting the first group of associated bit lines and the second group of associated bit lines, and (iv) output the third voltage. Also, disclosed is a method of operation and/or control of such an integrated circuit device as well as such voltage generation circuitry.
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Bauser Philippe
Fisch David
Micro)n Technology, Inc.
Nguyen Hien
Phung Anh
Wilmer Cutler Pickering Hale and Dorr LLP
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