Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1993-04-01
1995-06-06
Pal, Asok
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041923, 437192, C23C 1434
Patent
active
054219744
ABSTRACT:
An improved metallization and method of metallization manufacture is provided which achieves highly conductive interconnect routing and ohmic contact between active junctions while minimizing or inhibiting cross-diffusions between the junctions and overlying conductors. A barrier layer of titanium and tungsten alloy, formed as part of the metallization layer, is placed between the junction and overlying conductor to minimize or inhibit such diffusions. The barrier forms a silicide at the barrier/junction interface at approximately the same time or simultaneously with a nitride formed at the upper surface of the barrier. Nitridation and silicidation is formed in a conventional diffusion furnace at low pressure to ensure accurate control of silicidation, nitridation, and contamination therein. By utilizing a conventional diffusion furnace to grow the nitride and silicide, the improved methodology herein achieves more cost effective metallization.
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Advanced Micro Devices , Inc.
Pal Asok
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