Integrated circuit having resistive memory

Details Integrated circuit having resistive memory Integrated circuit having resistive memory

2008-05-13

2008-05-13

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S189011, C365S207000

Reexamination Certificate

active

07372725

ABSTRACT:
A memory device including a memory cell, a first circuit, and a second circuit. The memory cell includes phase-change material. The first circuit is configured to provide pulses to the phase-change material and to program each of more than two states into the memory cell. The second circuit is configured to sense the present state of the memory cell and provide signals that indicate the present state of the memory cell. The first circuit programs each of the more than two states into the memory cell based on the signals.

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“A Nonvolatile Memory Based on Reversible Phase Changes Between fcc and hcp”, Dong-Ho Ahn, et al., 2005. (3 pgs.).

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