Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-08
2011-03-08
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S388000, C257S407000, C257S413000, C257SE29264
Reexamination Certificate
active
07902599
ABSTRACT:
Embodiments of an integrated circuit are provided. In one embodiment, the integrated circuit includes a substrate, a short channel (SC) device, and a long channel (LC) device. The short channel device includes an SC gate insulator overlying a first portion of the substrate, an SC metal gate overlying the SC gate insulator, a polycrystalline silicon layer overlying the metal gate, and a silicide layer formed on the polycrystalline silicon layer. The long channel (LC) device includes an LC gate insulator overlying a second portion of the substrate and an LC metal gate overlying the LC gate insulator. An etch stop layer overlies an upper surface of the substrate, and an interlayer dielectric overlies an upper surface of the etch stop layer. An SC cap is disposed in the interlayer dielectric, overlies the SC device, and is formed substantially from the same metal as is the LC metal gate.
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International Search Report for PCT/US2009/001617 mailed Jul. 2, 2009.
Carter Richard J.
Hargrove Michael J.
Kluth George J.
Pellerin John G.
Advanced Micro Devices , Inc.
Ingrassia Fisher & Lorenz P.C.
Smoot Stephen W
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