Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-05
2000-10-03
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438633, 438638, 438688, 257765, 257771, 257774, H01L 214763, H01L 2144, H01L 2348
Patent
active
061272647
ABSTRACT:
A interconnect structure is provided having a conductor with enhanced thickness. The conductor includes an upper portion and a lower portion, wherein the lower portion geometry is sufficient to increase the current-carrying capacity beyond that provided by the upper portion. The lower portion is formed by filling a trench within an upper dielectric region, and the upper portion is formed by selectively removing a conductive material from the upper dielectric surface except for regions directly above the lower portion. The upper and lower portions thereby form a conductor of enhanced cross-section which can be produced by modifying a via-etch mask, rather than having to reconfigure and/or move interconnect features formed by a metal mask.
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Bandyopadhyay Basab
Brennan William S.
Dawson Robert
Fulford Jr. H. Jim
Hause Fred N.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Kowert Robert C.
Nguyen Ha Tran
Niebling John F.
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