Integrated circuit having both vertical and horizontal devices a

Details Integrated circuit having both vertical and horizontal devices a Integrated circuit having both vertical and horizontal devices a

1995-08-02

1996-09-10

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257347, 257350, H01L 21265, H01L 2170

Patent

active

055548709

ABSTRACT:
An integrated circuit (10) has a vertical device, such as a transistor (71), formed by epitaxial growth from a substrate (12) and a horizontal device, such as a transistor (73, 75) grown epitaxially from the vertical device. In accordance with one embodiment of the invention, all six transistors of an SRAM cell can be formed in single crystal material for improved device characteristics and increased cell density. Utilization of various combinations of vertical and horizontal devices permits a large degree of vertical integration within semiconductor devices.

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Peter J. Schubert et al., "Vertical Bipolar Transistors Fabricated in Local Silicon on Insulator Films Prepared Using Confined Lateral Selective Epitaxial Growth (CLSEG)", IEEE Transactions on Electron Devices, vol. 37, No. 11, Nov. 1990, pp. 2336-2342.

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