Integrated circuit having at least one metallization level

Details Integrated circuit having at least one metallization level Integrated circuit having at least one metallization level

2007-03-27

2007-03-27

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S757000, C257S760000, C257SE21564, C438S462000

Reexamination Certificate

active

10839770

ABSTRACT:
An integrated circuit is provided that includes at least one metallization level having a plurality of dummy conductors. At least one of the dummy conductors has an oriented shape made up of a plurality of non-parallel rectangles in mutual contact. In one embodiment, the at least one dummy conductor is in the form of an “L”. In another embodiment, the at least one dummy conductor is in the form of a Latin cross. In yet another embodiment, the at least one dummy conductor is in the form of a “T”.

REFERENCES:
patent: 5441915 (1995-08-01), Lee
patent: 5854125 (1998-12-01), Harvey
patent: 6255697 (2001-07-01), Yoo et al.
patent: 2001/0010387 (2001-08-01), Yoo et al.
patent: 2001/0022399 (2001-09-01), Koubuchi et al.
patent: 2001/0041425 (2001-11-01), Ohsumi et al.
patent: 2002/0043715 (2002-04-01), Takizawa
patent: 06061230 (1994-03-01), None

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