Method for preventing Cu contamination and oxidation in...

Details Method for preventing Cu contamination and oxidation in... Method for preventing Cu contamination and oxidation in...

2007-03-06

2007-03-06

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S687000

Reexamination Certificate

active

10840049

ABSTRACT:
A method for reducing or preventing contamination or oxidation of copper surfaces included in semiconductor process wafers including providing a semiconductor wafer including copper features having newly formed process surfaces following a semiconductor manufacturing process forming the newly formed process surfaces; exposing the process surfaces to an alkaline solution for a period of time sufficient to chemically modify the newly formed process surfaces prior to substantial exposure of the process surfaces to a contaminating or oxidizing atmosphere; and, placing the semiconductor wafer in a semiconductor wafer holding environment in queue for subsequent semiconductor manufacturing processes.

REFERENCES:
patent: 6065424 (2000-05-01), Shacham-Diamand et al.
patent: 6207247 (2001-03-01), Morita
patent: 6217667 (2001-04-01), Jolley
patent: 6632288 (2003-10-01), Jolley
patent: 2002/0127825 (2002-09-01), Mui et al.

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