Integrated circuit having, and process providing, different oxid

Details Integrated circuit having, and process providing, different oxid Integrated circuit having, and process providing, different oxid

1996-08-09

1999-08-24

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257316, 257318, 438259, 438264, 3651851, H01L 29788

Patent

active

059427809

ABSTRACT:
An integrated circuit ("IC") having three different oxide layer thicknesses and a process for manufacturing the IC using a single oxide growth step is provided. A first region is formed on a substrate surface with oxidation enhancing properties. A second region is formed on the substrate surface with a dose of nitrogen that retards oxidation. An oxide layer is grown from the first and the second regions and a third region of the substrate such that the first, second, and third regions yield a first oxide layer for the capacitor, a second oxide layer for the read transistor and a third oxide layer for the write transistor.

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"Simultaneous Growth of Different Thickness Gate Oxides in Silicon CMOS Processing", Brian Doyle, IEEE Electron Device Letters, vol. 16, No. 7, Jul. 1995, pp. 301-303.

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