Integrated circuit having amorphous silicide layer in contacts a

Details Integrated circuit having amorphous silicide layer in contacts a Integrated circuit having amorphous silicide layer in contacts a

1997-03-12

1999-01-12

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438628, H01L 214763

Patent

active

058588736

ABSTRACT:
An integrated circuit, a contact and a method of manufacture therefor. The integrated circuit has a silicon substrate with a recess formed therein that provides an environment within which the contact is formed. The contact includes: (1) an adhesion layer deposited on an inner surface of the recess, (2) an amorphous layer, deposited over the adhesion layer within the recess and (3) a central plug, composed of a conductive material, deposited at least partially within the recess, the silicide layer being amorphous to prevent the conductive material from passing through the amorphous silicide layer to contact the adhesion layer thereby to prevent junction leakage.

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