Integrated circuit having a top side wafer contact and a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S149000

Reexamination Certificate

active

07345343

ABSTRACT:
The present invention provides an integrated circuit and a method of manufacture therefore. The integrated circuit (100, 1000), in one embodiment without limitation, includes a dielectric layer (120, 1020) located over a wafer substrate (110, 1010), and a semiconductor substrate (130, 1030) located over the dielectric layer (120, 1020), the semiconductor substrate (130, 1030) having one or more transistor devices (140, 1040) located therein or thereon. The integrated circuit (100, 1000) may further include an interconnect (170, 1053) extending entirely through the semiconductor substrate (130, 1030) and the dielectric layer (120, 1020), thereby electrically contacting the wafer substrate (110, 1010).

REFERENCES:
patent: 6815749 (2004-11-01), Mandelman et al.
patent: 6952042 (2005-10-01), Stratton et al.
patent: 2002/0081809 (2002-06-01), Pinto et al.
patent: 2003/0203546 (2003-10-01), Burbach et al.
patent: 2005/0001314 (2005-01-01), Tanaka et al.
patent: 2005/0035381 (2005-02-01), Holm et al.
patent: 2005/0285173 (2005-12-01), Nagai et al.
patent: 2006/0012046 (2006-01-01), Koura et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit having a top side wafer contact and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit having a top side wafer contact and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit having a top side wafer contact and a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3975964

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.