Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-02
2008-03-18
Andujaf, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S149000
Reexamination Certificate
active
07345343
ABSTRACT:
The present invention provides an integrated circuit and a method of manufacture therefore. The integrated circuit (100, 1000), in one embodiment without limitation, includes a dielectric layer (120, 1020) located over a wafer substrate (110, 1010), and a semiconductor substrate (130, 1030) located over the dielectric layer (120, 1020), the semiconductor substrate (130, 1030) having one or more transistor devices (140, 1040) located therein or thereon. The integrated circuit (100, 1000) may further include an interconnect (170, 1053) extending entirely through the semiconductor substrate (130, 1030) and the dielectric layer (120, 1020), thereby electrically contacting the wafer substrate (110, 1010).
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Hower Philip L.
Lin John
Loftin William C.
Phan Tony T.
Andujaf Leonardo
Brady III W. James
Soderholm Krista
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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