Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-04-26
2009-06-16
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07548448
ABSTRACT:
A reprogrammable switch includes a first phase-change element, a first reference element, and a second reference element. The switch includes a sense amplifier for outputting a first signal based on a comparison of a signal from the first phase-change element to a signal from the first reference element and for outputting a second signal based on a comparison of the signal from the first phase-change element to a signal from the second reference element.
REFERENCES:
patent: 5663902 (1997-09-01), Bennett et al.
patent: 6448576 (2002-09-01), Davis et al.
patent: 6477103 (2002-11-01), Nguyen et al.
patent: 6692994 (2004-02-01), Davis et al.
patent: 6937507 (2005-08-01), Chen
patent: 6944050 (2005-09-01), Kang et al.
patent: 7042760 (2006-05-01), Hwang et al.
patent: 7286394 (2007-10-01), Ooishi
patent: 7304885 (2007-12-01), Cho et al.
patent: 2003/0123207 (2003-07-01), Toyoshima
patent: 2004/0125643 (2004-07-01), Kang et al.
patent: 2004/0140523 (2004-07-01), Hudgens et al.
patent: 2004/0201017 (2004-10-01), Chen
patent: 2005/0047189 (2005-03-01), Thomas et al.
patent: 2005/0151578 (2005-07-01), Huang et al.
patent: 0491490 (1992-06-01), None
patent: 0591870 (1994-04-01), None
patent: WO 01/45108 (2001-06-01), None
US 6,859,396, 02/2005, Forbes (withdrawn)
“A PROM Element Based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process”; Mohsen Alavi, et al., 1997. (4 pgs.).
“Dichotomic Current-Mode Serial Sensing Methodology for Multistorage Non-Volatire Memories”; Cristiano Calligaro, et al., 1996. (4 pgs.).
Lai, S., “OUM-A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications,” IEDM 2001, 4 pgs., (2001).
Lai, S., “Current Status Of The Phase Change Memory And It's Future,” IEDM 2003, 4 pgs., (2003).
Horii, H., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM,” VLSI, 2003 2 pgs., (2003).
ECD Ovonics, Research Report, Ovonic Unified Memory, http://www.ovonics.com/PDFs/Elec Memory Research Report/OUM.pdf, 1999.
Happ Thomas
Philipp Jan Boris
Dicke Billig & Czaja, PLLC
Dinh Son
Infineon - Technologies AG
Nguyen Nam
LandOfFree
Integrated circuit having a switch does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit having a switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit having a switch will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4142196