Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Patent
1998-11-13
2000-03-14
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
257781, 257750, 257758, H01L 2348, H01L 2352, H01L 2940
Patent
active
060376686
ABSTRACT:
In one embodiment of the invention, conductive support structures (112) are formed within an interlevel dielectric layer. The conductive support structures (112) lie within the bond pad region (111) of the integrated circuit and provide support to portions of the interlevel dielectric layer that have a low Young's modulus. The conductive support structures (112) are formed using the same processes that are used to form metal interconnects in the device region (109) of the integrated circuit, but they are not electrically coupled to semiconductor devices that lie within the device region (109). Conductive support structures (114) are also formed within the scribe line region (104) to provide support to the interlevel dielectric layer in this region of the integrated circuit.
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Saran, et al., "Elimination of Bond-pad Damage Through Structural Reinforcement of Intermetal Dielectrics", IEEE98CH36173 36th Annual International Reliability Physics Symposium, pp. 225-231 (1998).
Cave Nigel G.
Farkas Janos
Yu Kathleen C.
Clark Jhihan B.
Motorola Inc.
Rodriguez Robert A.
Saadat Mahshid
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