Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-11-06
2007-11-06
Auduong, Gene N (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000, C365S210130
Reexamination Certificate
active
11324700
ABSTRACT:
A memory includes a first resistive memory cell, a current source configured to provide an input current indicating a desired resistance level for the first memory cell, and a current mirror that mirrors the input current to provide an output current. The memory includes a first switching circuit configured to pass the output current to the first memory cell with the first memory cell not at the desired resistance level, and block the output current from the first memory cell in response to the first memory cell achieving the desired resistance level.
REFERENCES:
patent: 4876668 (1989-10-01), Thakoor et al.
patent: 6075719 (2000-06-01), Lowrey et al.
patent: 6222771 (2001-04-01), Tang et al.
patent: 6687153 (2004-02-01), Lowrey
patent: 6758711 (2004-07-01), Chen
patent: 6813177 (2004-11-01), Lowrey et al.
patent: 6847544 (2005-01-01), Smith et al.
patent: 6898113 (2005-05-01), Tsuji
patent: 2004/0246804 (2004-12-01), Cho et al.
patent: 2004/0246808 (2004-12-01), Cho et al.
patent: 2005/0117387 (2005-06-01), Hwang et al.
patent: 2005/0117388 (2005-06-01), Cho et al.
patent: 2005/0169093 (2005-08-01), Choi et al.
patent: 2005/0281073 (2005-12-01), Cho et al.
Greg Artwood et al., “Intel StrataFlash™ Memory Technology Overview”, Intel Technology Journal Q4'97, pp. 1-8.
Tyler Lowrey, “Ovonic Unified Memory”, Ovonyx, Inc., Slides 1-80 (Dec. 1999).
T. Sakamoto et al., “A Nonvolatile Programmable Solid Electrolyte Nanometer Switch”, 2004 IEEE International Solid-State Circuits Conference.
Hyung-rok Oh et al., “Enhanced Write Performance of a 64Mb Phase-change Random Access Memory”, 2005 International Solid-State Circuits Conference.
Auduong Gene N
Dicke Billig & Czaja, PLLC
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