Integrated circuit having a plurality of MOSFET devices

Details Integrated circuit having a plurality of MOSFET devices Integrated circuit having a plurality of MOSFET devices

2011-04-26

2011-04-26

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S279000, C257SE21598

Reexamination Certificate

active

07932178

ABSTRACT:
A method is provided for manufacturing an integrated circuit having a plurality of MOSFET devices, comprising the steps of: providing a plurality of MOSFET devices each having a first and a second structural parameter associated therewith, wherein a value of one of the first and a second structural parameter of each device is selected to provide a value of a performance parameter of the device substantially equal to a predetermined reference value, the predetermined reference value being the same for each device.

REFERENCES:
patent: 6204542 (2001-03-01), Kinoshita et al.
patent: 2005/0032275 (2005-02-01), Toda et al.
patent: 2005/0098829 (2005-05-01), Doris et al.
patent: 2005/0233540 (2005-10-01), Yoon et al.
patent: 2006/0131662 (2006-06-01), Yamada et al.

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