Integrated circuit having a phase change memory cell...

Details Integrated circuit having a phase change memory cell... Integrated circuit having a phase change memory cell...

2006-07-10

2010-02-16

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S225700, C365S227000, C365S226000, C365S051000, C365S063000

Reexamination Certificate

active

07663909

ABSTRACT:
A memory cell includes a first electrode and an opposing second electrode, and a memory stack between the first and second electrodes. The memory stack includes a first layer of thermal isolation material contacting the first electrode, a second layer of thermal isolation material contacting the second electrode, and a phase change material between the first layer of thermal isolation material and the second layer of thermal isolation material. In this regard, the phase change material defines an active region width that is less than a width of either of the first layer of thermal isolation material and the second layer of thermal isolation material.

REFERENCES:
patent: 10-2006-0079455 (2006-07-01), None
Hwang, Cheol Seong, KR 10-2006-0079455, published Jul. 6, 2006, Machine Translation, pp. 1-64.
S.L. Cho et al., “Highly Scalable On-Axis Confined Cell Structure for High Density PRAM beyond 256Mb”, 2005 Symposium on VLSI Technology, 2 pgs. (2005).
Lai et al., “OUM—A 180nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications”, IEDM 2001.
Lai et al., “Current Status of the phase change memory and its future”, IEDM, 4 pgs (2003).
Y.H. Ha et al., “An Edge Contact Type Cell for Phase Change RAM Featureing very Low Power Consumption”,VLSI, 2 pgs. 2003.
Hori, H. et al., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM”, 2003 Symposium on VLSI Technology, 2 pgs. (2003).
Hwang et al., “Full Integration and Reliability Evaluation of Phase-change RAM”, Symposium on VLSI Teachnology Digest of Technical Papers, 2 pgs. (2003).
Geong et al., “Switching Current Scaling and Reliability Evaluation in Pram”, NVSMW, 2004.
Pellizzer et al., Novel Trench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications, VLSI, 2 pgs. (2004).
English Translation of Korean Office Action mailed Apr. 28, 2008 for Korean Application No. 10-2007-0069304, Low Power Phase Change Memory Cell Having Different Phase Change Materials.

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