Integrated circuit having a non-volatile memory cell...

Details Integrated circuit having a non-volatile memory cell... Integrated circuit having a non-volatile memory cell...

2006-08-01

2006-08-01

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S185080, C365S185090, C365S225700

Reexamination Certificate

active

07085179

ABSTRACT:
A semiconductor integrated circuit device has a fuse device that can be electrically disconnected without a breakage caused by using a laser beam or current. The semiconductor integrated circuit device employs, as the fuse device for storing status information, a MOSFET of a single polysilicon EEPROM-type cell manufactured through a process of fabricating a volatile semiconductor memory cell array.

REFERENCES:
patent: 6031771 (2000-02-01), Yiu et al.
patent: 6191980 (2001-02-01), Kelley et al.
patent: 6365421 (2002-04-01), Debenham et al.
patent: 6407946 (2002-06-01), Maruyama et al.
patent: 6452248 (2002-09-01), Le
patent: 6646930 (2003-11-01), Takeuchi et al.
patent: 6791881 (2004-09-01), Shukuri et al.
patent: 6914842 (2005-07-01), Huang et al.

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