Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-27
1997-08-26
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257379, 257528, 257529, 327525, 365177, 3652257, H01L 2306
Patent
active
056613237
ABSTRACT:
An integrated circuit fuse circuit includes a plurality of fuses each connected to an output terminal, and a plurality of fuse programming circuits, a respective one of which is connected between a respective fuse and a reference voltage. Each of the fuse programming circuits includes a pair of complementary bipolar transistors and a field effect transistor. The pair of complementary bipolar transistors produce a large current through the associated fuse in response to a fuse programming signal which is applied to the field effect transistor. The fuse programming circuit may be fabricated in an integrated circuit by providing first and second spaced apart regions of second conductivity type in a well of first conductivity type, and a third region of the first conductivity type in the first region. An insulated gate is provided on the face between the first and second spaced apart regions. An insulated fuse is also provided on the face, electrically connected to the third region.
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Greve, "Programming Mechanism of Polysilicon Resistor Fuses", IEEE Transactions on Electron Devices, vol. ED-29, No. 4, Apr. 1982, pp. 719-724.
Choi Jeong-hyuk
Kim Dong-Jun
Yi Jeong-hyong
Mintel William
Samsung Electrics Co., Ltd.
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