Integrated circuit fabrication method

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20419215, 20419228, 437225, 437238, C23C 1434, H01L 21302

Patent

active

054416167

ABSTRACT:
A method for forming an anti-reflective coating useful in the fabrication of integrated circuits is discussed. Applicants have found that preheating semiconductor wafers prior to the application of amorphous silicon anti-reflective coatings tends to reduce undesirable particulates which may attach to the wafer. The process is illustratively performed in a Varian 3180 machine having four stations. Illustratively, the wafer may be preheated between 70.degree. C. and 175.degree. C. prior to and during the sputter deposition of an amorphous silicon anti-reflective coating.

REFERENCES:
patent: 4617192 (1986-10-01), Chin et al.
patent: 4634474 (1987-01-01), Camlibel et al.
patent: 4641420 (1987-02-01), Lee
patent: 4652467 (1987-03-01), Brinker et al.
patent: 4722298 (1988-02-01), Rubin et al.
patent: 4933304 (1990-06-01), Chen et al.
patent: 5019234 (1991-05-01), Harper
patent: 5066615 (1991-11-01), Brady et al.
patent: 5106786 (1992-04-01), Brady et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5312780 (1994-05-01), Nanda et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit fabrication method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2179292

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.