Integrated circuit fabrication method

Details Integrated circuit fabrication method Integrated circuit fabrication method

1993-12-21

1995-08-15

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419228, 437225, 437238, C23C 1434, H01L 21302

Patent

active

054416167

ABSTRACT:
A method for forming an anti-reflective coating useful in the fabrication of integrated circuits is discussed. Applicants have found that preheating semiconductor wafers prior to the application of amorphous silicon anti-reflective coatings tends to reduce undesirable particulates which may attach to the wafer. The process is illustratively performed in a Varian 3180 machine having four stations. Illustratively, the wafer may be preheated between 70.degree. C. and 175.degree. C. prior to and during the sputter deposition of an amorphous silicon anti-reflective coating.

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