Integrated circuit fabrication having contact opening

Details Integrated circuit fabrication having contact opening Integrated circuit fabrication having contact opening

1996-04-12

1997-08-05

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438586, 438669, H01L 2144, H01L 2148

Patent

active

056542402

ABSTRACT:
A method of semiconductor fabrication having applicability to forming contacts to sources and drains especially in SRAM applications is disclosed. A dielectric and an overlying polysilicon conductor are formed and patterned thereby exposing a semiconductor substrate. A silicide layer is deposited, thereby contacting the polysilicon layer and the substrate. Subsequent patterning of the silicide layer using an oxide hard mask provides electrical contact between the polysilicon layer and the substrate without the risk of trenching into the substrate.

REFERENCES:
patent: 4288256 (1981-09-01), Ning et al.
patent: 4373251 (1983-02-01), Wilting
patent: 4978637 (1990-12-01), Liou et al.
patent: 4994402 (1991-02-01), Chiu
patent: 5013686 (1991-05-01), Choi et al.
patent: 5110753 (1992-05-01), Gill et al.
patent: 5124280 (1992-06-01), Wei et al.
patent: 5149665 (1992-09-01), Lee
patent: 5151387 (1992-09-01), Brady et al.
patent: 5162262 (1992-11-01), Ajika et al.
patent: 5210048 (1993-05-01), Shoji et al.
patent: 5246883 (1993-09-01), Lin et al.
patent: 5256248 (1993-10-01), Jun
patent: 5256584 (1993-10-01), Hartmann
patent: 5270240 (1993-12-01), Lee
Introcution to Microelectronic Fabrication, vol. V, Modular Series on Solid State Devices, G.W. Neudeck et al., Addison-Wesley Publishing Company, pp. 142-145, no date provided.
Wolf et al., "Silicon Processing for the ULSI Era," vol. I, pp. 183-185, 1990, no month provided.

Affiliated with

Also associated with

Rating

Integrated circuit fabrication having contact opening does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit fabrication having contact opening, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit fabrication having contact opening will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1074609