Integrated circuit fabrication

Details Integrated circuit fabrication Integrated circuit fabrication

1997-06-09

1999-08-31

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438743, H01L 2100

Patent

active

059453559

ABSTRACT:
A novel process for forming a window, illustratively, an emitter window BiCMOS process is disclosed. An anisotropic etch followed by an isotropic etch to open the window is disclosed. The isotropic etch prevents contamination of the substrate by the anisotropic etching process.

REFERENCES:
patent: 4377438 (1983-03-01), Moriya et al.
patent: 4484978 (1984-11-01), Keyser
patent: 4585517 (1986-04-01), Stemple
patent: 4732658 (1988-03-01), Lee
patent: 5776835 (1998-07-01), Yeh et al.
patent: 5783496 (1998-07-01), Flanner et al.

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