Integrated circuit fabrication

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

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Details

438592, 438585, 438652, 438653, 438655, 438656, 438618, 438621, 438649, 438642, 438625, 259412, 259413, H01L 21283

Patent

active

058468714

ABSTRACT:
Undesirable counter doping of n.sup.+ /p.sup.+ gates illustratively through cross diffusion through an overlying silicide is inhibited by insertion of layers of titanium nitride and titanium, tungsten or tantalum between the polysilicon gates and an overlying silicide.

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