Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-07-21
2000-10-31
Fourson, George
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438624, 438626, 438627, 438783, H01L 213115, H01L 2128
Patent
active
061402222
ABSTRACT:
An integrated circuit and its method of formation are disclosed. The circuit utilizes a spin-on glass as an interlevel dielectric. Above and below the spin-on glass is located a phosphorous doped dielectric. The doped dielectric prevents sodium from becoming mobile under the influence of subsequently applied electric fields.
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Bollinger Cheryl Anne
Fieber Catherine Ann
Steiner Kurt George
Fourson George
Francos William S.
Lucent Technologies - Inc.
Rehberg John T.
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