Integrated-circuit die suitable for wafer-level testing and meth

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...

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257208, H01L 23544

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active

058616608

ABSTRACT:
A semiconductor integrated-circuit die includes a substrate of semiconductor material that has an edge. A conductive layer is disposed on the substrate, and a first insulator layer is disposed between the said substrate and the conductive layer. A functional circuit is disposed in the die. A conductive path is disposed beneath the insulator layer and is coupled to the circuit, the conductive path having an end portion that is located substantially at the edge of the substrate. The wafer on which the die is disposed has one or more signal lines that run along the scribe lines of the wafer. Before the die is scribed from the wafer, the conductive path couples the circuit on the die to one of these signal lines. The end portion of the conductive path is formed when the die is scribed from the wafer.

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