Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-06
1999-08-31
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257758, 257766, 257776, 257774, H01L 2976, H01L 2348
Patent
active
059457090
ABSTRACT:
To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passivation layer over the bus and plating a thick metal layer, preferably nickel, in the channel. The metal strap layer dramatically reduces the resistance of the bus.
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Kasem Mohammad
Williams Richard K.
Siliconix incorporated
Steuder David E.
Tran Minh Loan
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