Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2005-12-06
2005-12-06
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S780000
Reexamination Certificate
active
06972494
ABSTRACT:
An integrated circuit die carries conductive pads and thereon, the larger pads being suitable for flip-chip assembly and the smaller pads being suitable for wire bond assembly. The pitch between pads is at least the minimum required for flip-chip assembly, whereas the pitch between each of pads and the adjacent pad or pads is at least the minimum required for wire bond assembly. For wire bond assembly a passivation layer exposing all pads is provided, whereas for flip-chip assembly a passivation layer exposes only certain pads so that conductive bumps may be provided. The provision of pads complying with the minimum spacing requirements for both flip-chip and wire bond assembly enables a “dual purpose” (e.g. one set of pads being for normal production and another set for testing purposes) die to be produced without any increase in die size.
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European Search Report, dated Nov. 24, 1999.
Addinall Ross
Davies Gareth Rhys
Agere Systems Inc.
Cao Phat X.
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