Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-21
2005-06-21
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S106000, C438S107000, C438S455000, C438S458000, C438S464000
Reexamination Certificate
active
06908845
ABSTRACT:
The opening is initially fabricated in an upper surface of a wafer substrate, which allows for the use of alignment features on the upper surface of the wafer substrate. The openings are then filled with plugs. An integrated circuit is then manufactured over the upper surface of the substrate and the plugs. The plugs are located below the integrated circuit and do not take up “real estate” reserved for metal layers of the integrated circuit. A carrier is then bonded to an upper surface of the integrated circuit, whereafter a lower portion of the wafer substrate is removed in a grinding and etching operation. The plugs are then removed through a lower surface of the wafer substrate, whereafter the openings are filled with conductive members in a plating operation. A metal redistribution layer can be formed on a lower surface of the wafer substrate, because the carrier provides sufficient rigidity.
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Mahajan Ravi V.
Natarajan Bala
Swan Johanna M.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Nguyen Thanh
LandOfFree
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