Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-08-16
2010-10-05
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S724000, C257S777000
Reexamination Certificate
active
07808075
ABSTRACT:
The integrated circuit devices disclosed herein generally include two semiconductor dies. The first die generally has little or no I/O or ESD protection and includes a first plurality of exposed terminals (e.g., bump pads). The second die generally includes (i) a second plurality of exposed terminals, wherein at least one of the second plurality of terminals is in electrical communication with one or more of the first plurality of terminals, (ii) a plurality of input and/or output (I/O) circuits, wherein at least one of the I/O circuits is in electrical communication with one or more of the second plurality of terminals, and (iii) a plurality of I/O terminals, wherein at least one of the I/O terminals is in electrical communication with one or more of the I/O circuits. The present invention advantageously provides the ability to fabricate the second die using different (e.g., less expensive) manufacturing processes than those used to fabricate the first die.
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Chuan-Cheng Cheng, Choy Hing Li and Shuhua Yu: Integrated Circuit Devices with ESD Protection in Scribe Line, and Methods for Fabricating Same; U.S. Appl. No. 11/521,731; filed Sep. 14, 2006.
Cheng Chuan-Cheng
Li Choy Hing
Liou Shiann-Ming
Chambliss Alonzo
Marvell International Ltd.
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