Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-01-16
2007-01-16
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S773000, C257S786000
Reexamination Certificate
active
10770738
ABSTRACT:
An integrated circuit device structure which avoids misalignment when a contact hole is formed to expose a contact pad and a method of fabricating the same, are provided. The integrated circuit device includes a semiconductor substrate having a conductive region and an insulating region, a contact pad on the conductive region of the semiconductor substrate, an auxiliary pad adjacent to the contact pad, and an interlevel insulating layer on the semiconductor substrate and having a contact hole for exposing both the contact pad and the auxiliary pad.
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Kim Ki-nam
Yang Won-suk
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
Smoot Stephen W.
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