Integrated circuit devices including raised source/drain...

Details Integrated circuit devices including raised source/drain... Integrated circuit devices including raised source/drain...

2005-11-22

2005-11-22

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S385000, C257S296000

Reexamination Certificate

active

06967382

ABSTRACT:
Integrated circuit devices including raised source/drain structures having different heights are disclosed. An integrated circuit device can include a first raised source/drain structure having a first height above a substrate in a first region of the integrated circuit including devices formed at a first density. The integrated circuit device can further include a second raised source/drain structure having a second height that is greater than the first height in a second region of the integrated circuit including second devices formed at a second density that is less than the first density.

REFERENCES:
patent: 6346447 (2002-02-01), Rodder
patent: 6570222 (2003-05-01), Nozaki et al.
patent: 6608354 (2003-08-01), Hokazono et al.
patent: 6744104 (2004-06-01), Aoki et al.

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